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IR3101
MOSFET Characteristics
V BIAS (V CC , V B ) = 15V and T A = 25 o C unless otherwise specified. The V DD parameter is referenced to COM.
Symbol
V (BR)DSS
I DSS
R DS(on)
V SD
R DS(on)
V SD
E ON
E OFF
E REC
t RR
E ON
E OFF
E REC
t RR
C oss
Definition
Drain-to-Source breakdown
voltage
Drain-to-Source leakage
current
Static drain-to-source on
resistance
Diode forward voltage
Static drain-to-source on
resistance
Diode forward voltage
Turn-On energy losses
Turn-Off energy losses
Body-Diode reverse recovery
Llosses
Reverse recovery time
Turn-On energy losses
Turn-Off energy losses
Body-Diode reverse recovery
Llosses
Reverse recovery time
Output capacitance
Min.
500
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
0.8
0.82
1.7
0.70
100
5
10
105
150
10
15
130
-
Max.
-
50
1.0
0.9
2.0
0.79
135
10
20
180
205
17
35
230
100
Units
V
μ A
?
V
?
V
μJ
μJ
μJ
ns
μJ
μJ
μJ
ns
pF
Conditions
V IN =0V, I D =250 μ A
V DS =500V, V IN =0V
I D = 1.5A
I D = 1.5A, V IN =0V
I D = 1.5A, T J =125°C
I D = 1.5A, V IN =0V, T J =125°C
I F = 1.5A
V CC = 300V
di/dt = 200A/ μ s
T J =125°C
I F = 1.5A
V CC = 300V
di/dt = 200A/ μ s
V IN =0V, V DD =30V, f=1MHz
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